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| HF75-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-28S is Designed for bradband aplications up to 30 MHz. PACKAGE STYLE .380 STUD .112x45 A B C E OC FEATURES: * PG = 18 dB min. at 75 W/30 MHz * IMD3 = -30 dBc max. at 75 W(PEP) * OmnigoldTM Metalization System E B H I J D #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC 5.0 A 60 V 35 V 166 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.05 C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10607 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 75 mA f = 30 MHz 10 100 80 13.5 14.5 -30 POUT = 75 W dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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